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Wideband high power amplifier from UMS August 12, 2014

United Monolithic Semiconductors (UMS) has launched new high power amplifier – CHA6552-QJG. Amplifier is made in the form of monolithic microwave IC on the basis of GaAs technology with integrated power detector. The CHA6552-QJG model is characterized by high linearity and a good return losses.

 

Main features

  • Frequency range: 5.8…8.5 GHz
  • Linear gain: 22 dB
  • Output power P1dB (6.5 GHz): 36 dBm
  • Saturated output power (6.5 GHz): 36.8 dBm
  • Output 3-rd order interception point: 45 dBm
  • Output return loss: 15 dB
  • Power-added efficiency – PAE (6.5 GHz): 31.8%
  • Supply voltage: 7 V

 

Amplifier is supplied in low cost SMD package QFN 6 x 6 mm with 40 leads.

Main application for new amplifier: point to point radio and commercial telecommunication systems.

Radiocomp LLC - the Official Distributor of UMS in Russia - provides with more information on the item.

 

Data sheet 707 kB


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