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High frequency power amplifiers from UMS March 13, 2013

United Monolithic Semiconductors (UMS) announced the launch of two new power amplifiers: CHA3080-98F and CHA3090-98F, with an on-chip power detector integrating a directional coupler, a detection diode and a reference diode to be used in differential mode.

These two models are broadband three-stage medium power amplifiers, intended for the frequency ranges 71…76 GHz and 81…86 GHz, correspondingly. Circuits are made in the form of monolithic microwave IC on the basis of GaAs technology and are available in chip form with BCB layer protection. They are manufactured with a low noise pHEMT process, 0.1µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

As a spectrum analyzer, specially developed Application Programming Interface performs up to 1.2 million FFTs every second, delivering real-time spectrum data to open-source Graphical User Interface, or to your software application developed by a customer. Because of these immense processing requirements, a desktop PC with an Intel i7-2600 or better, or a laptop with an i7-3612QM or better is recommended.

 

Main features of CHA3080-98F and CHA3090-98F, respectively:

  • Linear gain: 16 and 13 dB
  • Output power P1dB: 19 and 17 dBm
  • Saturated output power: 21 and 19 dBm
  • Power detector dynamic range: 20 dB
  • Gain control range: 10 dB
  • Noise figure: 4 dB
  • Input/output return loss: 12/12 and 8/12 dB
  • Maximum continuous input power: +12 dBm
  • Supply voltage: 3.5 V
  • Operating temperature range: -40…85 ºС
  • Chip sizes: 3.96×1.78×0.07 and 3.36×1,78×0.07 mm

New amplifiers have been designed to be used in high capacity telecommunication systems.

Radiocomp LLC - the Official Distributor of United Monolithic Semiconductors in Russia - provides with more information onthe item.


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