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New low noise amplifier from UMS: CHA2110 October 25, 2012

United Monolithic Semiconductors (UMS) has launched new low noise amplifier (LNA) - CHA2110. This product is a two-stage wideband self-biased amplifier made by technology on the basis of GaAs. Following the bare die version (CHA2110-98F) the amplifier is now available also in QFN package (CHA2110-QDG).


Main features

  • frequency range: 7…12 GHz
  • linear gain: 19 dB
  • noise figure: 1.2 dB
  • return losses: 12 dB
  • output power P1dB (10 GHz): 11 dBm
  • 3rd order interception point (f=10 GHz): 21 dBm
  • supply voltage: 4 V
  • operating temperature range: -40…+85 ºC
  • sizes (CHA2110-98F): 1.93×1.30×0.10 mm

Due to different connection options of the chip there are three modes of amplifier operation: with low consumption, with higher gain and with higher output power (up to 13 dBm at 10 GHz).

New amplifier is designed for military and space applications and for telecommunication systems.

The Franco-German company UMS is one of the Europe's leading developers and manufacturers of electronic microwave components, first of all, integrated circuits at frequencies up to 100 GHz.

Radiocomp LLC - the Official Distributor of UMS in Russia - provides with more information on the item.

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