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The "Radiocomp" LLC will take part in the Fifth Anniversary International Military-Technical Forum "ARMY-2019"

June 17, 2019. The "Radiocomp" LLC will take part in the Fifth Anniversary International Military-Technical Forum "ARMY-2019"

 

We invite you on August 6, 2019 to the International Workshop on Signal Generation and Frequency Synthesis SGFS-2019

21 May 2019."Learn more about the "International Workshop on Signal Generation and Frequency Synthesis SGFS-2019"

The "Radiocomp" LLC took part in the exhibition "ExpoElectronica-2019"

22 April 2019. The "Radiocomp" LLC took part in the exhibition "ExpoElectronica-2019"

 

We invite you to visit our company's booth at the 22nd International Exhibition ExpoElectronica - 2019

March 28, 2019. We invite you to visit our company's booth at the 22nd International Exhibition ExpoElectronica - 2019

 

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High power transistor from Polyfet RF Devices based on silicon August 20, 2018

Polyfet RF Devices has released a new high power silicon based transistor, made by LDMOS technology - LS2641. This device is part of Polyfet's latest family of 28 VDC devices.

The new model has a high gain and efficiency, enhanced ESD protection, low noise and high drain breakdown voltage.

 

Main characteristics:

  • output power: 250 W
  • frequency range: 1 – 1300 MHz
  • minimum gain: 16 dB
  • total device dissipation: 500 W
  • efficiency: 60 %
  • maximum drain to gate and drain to source voltage: 80 V
  • saturation current: 29 Amp
  • junction to case thermal resistance: 0.35 °С/W
  • maximum junction temperature: 200 °С
  • dimensions with leads: 34.0 x 19.6 x 4.3 mm

The LS2641 transistor does not contain internal matching elements, so it can be used in both broadband applications (telecommunications, broadcasting systems) and narrowband applications.

Radiocomp, LLC - the Official Distributor of Polyfet RF Devices in Russia - provides with more information on the item.


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